The term semiconductor is applied to a material in which electric current is carried by electrons or holes and whose electrical conductivity, when extremely pure, rises exponentially with temperature and may be increased from its low “intrinsic” value by many orders of magnitude by “doping” with electrically active impurities.
Semiconductors are characterized by an energy gap in the allowed energies of electrons in the material that separates the normally filled energy levels of the valence band (where “missing” electrons behave like positively charged current carriers “holes”) and the conduction band (where electrons behave rather like a gas of free negatively charged carriers with an effective mass dependent on the material and the direction of the electrons’ motion). This energy gap depends on the nature of the material and varies with direction in anisotropic crystals. It is slightly dependent on temperature and pressure, and this dependence is usually almost linear at normal temperatures and pressures.
Data are presented in five tables. Table 1 lists the main crystallographic and semiconducting properties of a large number of semiconducting materials in three main categories: “Tetrahedral Semiconductors” in which every atom is tetrahedrally coordinated to four nearest neighbor atoms (or atomic sites) as for example in the diamond structure; “Octahedral Semiconductors” in which every atom is octahedrally coordinated to six nearest neighbor atoms—as for example the halite structure; and “Other Semiconductors.”
Table 2 gives electrical, magnetic, and optical properties, while Tables 3 and 4 give more details on the semiconducting properties and band structures of the most common semiconductors. Table 5 lists semiconducting minerals with typical resistivity ranges.
Substance | Molecular weight | Average atomic weight | Lattice parameters (Å, room temp.) | Density (g/cm3) | Melting point (K) | Microhardness, N/mm2 (M-Mohs scale) | Specific heat, J/kg·K (300 K) | Debye temp. (K) | Coefficient of thermal linear expansion [10–6 K–1 (300K)] | Thermal conductivity [mW cm-1·K-1 (300K)] |
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1.1. Tetrahedral (Adamantine) Semiconductors 1.1.1. Diamond Structure Elements (Strukturbericht Symbol A4, Space Group ) | ||||||||||
C (Diamond) | 12.01 | 3.56683 | 3.513 | ≈4713 (12.4 GPa) Transition to graphite > 980 | 10 (M) | 471.5 | 2340 | 1.18 | 9900(I) 23200(IIA) 13600(IIB) | |
Si | 28.09 | 5.43072 | 2.329 | 1687 | 11270 | 702 | 645 | 2.6 | 1240 | |
Ge | 72.64 | 5.65754 | 5.323 | 1211.35 | 7644 | 321.9 | 374 | 5.8 | 640 | |
α-Sn | 118.71 | 6.4912 | 5.769 | 505.1 (Tr. 286.4) | 213 | 230 | 5.4 (220 K) | |||
1.1.2. Sphalerite (Zinc Blende) Structure Compounds (Strukturbericht Symbol B3 Space Group ) I-VII Compounds | ||||||||||
CuF | 82.54 | 41.27 | 4.255 | 1181 | ||||||
CuCl | 98.99 | 49.49 | 5.4057 | 3.53 | 695 | 2.3 (M) | 490 | 240 | 12.1 | 8.4 |
CuBr | 143.45 | 71.73 | 5.6905 | 4.98 | 770 | 2.5 (M) | 381 | 207 | 15.4 | 12.5 |
Cul | 190.45 | 95.23 | 6.60427 | 5.63 | 878 | 192 | 276 | 181 | 19.2 | 16.8 |
AgBr | 187.77 | 93.89 | 6.473 | >1570 (Tr. 410) | 2.5 (M) | 270 | ||||
Agl | 234.77 | 117.39 | 6.502 | 5.67 | 831 | 2.5 (M) | 232 | 134 | -2.5 | 4.2 |
II-VI Compounds | ||||||||||
BeS | 41.08 | 20.54 | 4.865 | 2.36 | dec. | 3120 | ||||
BeSe | 87.97 | 43.99 | 5.139 | 4.315 | 2540 | |||||
BeTe | 136.61 | 68.31 | 5.626 | 5.090 | 1500 | |||||
BePo | (2318) | (109) | 5.838 | 7.3 | ||||||
ZnO | 81.39 | 40.69 | 4.63 | 5.675 | 2248 | 5.0 (M) | 494 | 416 | 2.9 | 234 |
ZnS | 97.46 | 48.72 | 5.4093 | 4.079 | 2100 (Tr. 1295) | 1780 | 472 | 530 | 6.36 | 251 |
ZnSe | 144.34 | 72.17 | 5.6676 | 5.42 | 1790 | 1350 | 339 | 400 | 7.2 | 140 |
ZnTe | 192.99 | 96.5 | 6.101 | 6.34 | 1568 | 900 | 264 | 223 | 8.19 | 108 |
ZnPo | (274) | (137) | 6.309 |