Section: 12 | Diffusion Data for Semiconductors |

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One or more tables in this document differ to those in the book. This is due to space restrictions in the book.

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The table 'TABLE 1. Diffusion Data for Silicon-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 2. Diffusion Data for Germanium-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 3. Diffusion Data for Gallium-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 4. Diffusion Data for Indium-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 5. Diffusion Data for Cadmium-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 6. Diffusion Data for Zinc-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 7. Diffusion Data for Aluminum-Based Semiconductors' has one or more different columns to those in the book version.
The table 'TABLE 8. Diffusion Data for Mercury-Based and Lead-Based Semiconductors' has one or more different columns to those in the book version.

How to Cite this Reference

DIFFUSION DATA FOR SEMICONDUCTORS

Derek W. Palmer and B. L. Sharma

The diffusion coefficient D in many semiconductors may be expressed by an Arrhenius-type relation

D = D₀ exp(–Q/kT)

where D₀ is a frequency factor, Q is the activation energy for diffusion, k is the Boltzmann constant, and T is the absolute temperature (K). In Tables 1 to 8, either D or the combination D₀ and Q are given for various diffusants in common semiconductors. Note in the tables, the temeprature range is given in °C.

Table No.	Semiconductors covered
1	Silicon-based
2	Germanium-based
3	Gallium-based
4	Indium-based
5	Cadmium-based
6	Zinc-based
7	Aluminum-based
8	Mercury-based and lead-based

Abbreviations used in the tables are as follows.

Abbreviation	Definition
AES	Auger electron spectroscopy
C-V	Capacitance-voltage profiling
CL	Cathode luminescence
D(c)	Concentration dependent diffusion coefficient
D_max	Maximum diffusion coefficient
DLTS	Deep-level transient spectroscopy
EPMA	Electron probe microanalysis
FP	Flame photometry
SEM	Scanning electron microscopy
SR	Spreading resistance
SIMS	Secondary ion mass spectrometry
TEM	Transmission electron microscopy
XRD	X-ray diffraction
XRF	X-ray fluorescence
(f)	Fast diffusion component
(i)	Interstitial diffusion component
(s)	Slow diffusion component
(∥)	Parallel to c direction
(⊥)	Perpendicular to c direction

Column definitions for Tables 1 to 8 are as follows.

Column heading	Definition
Semiconductor	Chemical symbol for semiconductor
Diffusant	Chemical symbol for diffusing species
Temp. range	Temperature range for applicability of Arrhenius-type diffusion relation, in °C
D	Diffusion coefficient, in cm² s^–1
D₀	Frequency factor, in cm² s^–1
Q	Activation energy, in eV
Method	Measurement method; refer to abbreviation list above
Ref.	Reference source of data
Year	Year of publication of reference (when applicable)

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TABLE 1. Diffusion Data for Silicon-Based Semiconductors

Semicond.	Diffusant	Temp. range/°C	D/cm² s^–1	D₀/cm² s^–1	Q/eV	Method	Ref.	Year
Continued on next page...
Si	H	120–1207		6 × 10^–1	1.03	Electrical and SIMS	1
Si	Li	25–1350		2.5 × 10^–3	0.65	Electrical	2	1960
Si	Na	530–800		1.65 × 10^–3	0.72	Electrical and FP	3	1967
Si	K	740–800		1.1 × 10^–3	0.76	Electrical and FP
Si	Cu	800–1100		4 × 10^–2	1	Radioactive	4	1958
Si	Cu	300–700		4.7 × 10^–3	0.43 (i)	Radioactive	5	1964
Si	Ag	1100–1350		2 × 10^–3	1.6	Radioactive	6	1961
Si	Au	700–1300		2.4 × 10^–4	0.39 (i)	Radioactive	7	1964
Si	Au			2.75 × 10^–3	2.05 (s)
Si	Be	1050	~ 10^–7			Electrical	8	1970
Si	Ca	1100	~ 6 × 10^–14			Electrical and SIMS	1
Si	Zn	980–1270		1 × 10^–1	1.4	Electrical	9	1963
Si	B	1100–1250		2.46	3.59	Electrical	10	1972
Si	B	840–1250		2.4 × 10¹	3.87	Electrical	11	1981
Si	B	810-1050		(6 ± 2) × 10^–2	3.12 ± 0.04	Electrical	98	2003
Si	Al	1119–1390		1.38	3.41	Electrical	12	1971
Si	Al	1025–1175		1.8	3.2	Electrical	13	1978
Si	Ga	1143–1393		3.74 × 10^–1	3.39	Electrical	12	1971
Si	Ga	900–1050		6 × 10¹	3.89	Radioactive	14	1971

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DIFFUSION DATA FOR SEMICONDUCTORS

TABLE 1. Diffusion Data for Silicon-Based Semiconductors

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